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合金法實現(xiàn)ZnO的P型轉(zhuǎn)化
全部作者： 張景文 王洪波 侯洵 第1作者單位： 西安交通大學 論文摘要： ZnO films were grown on Sapphire and n-type Silicon, and then deposited a gold film in some areas. After heat treatments in the air through gold alloy technics, they were employed to some electrical measurements. After treatment at the temperature of 850°C, ZnO, grown on sapphire and under gold layer, displayed super high resistivity. It seemed that the ZnO, grown on n-Si and under gold layer, displayed p-type conductivity, for diode-like I-V rectifying characteristics were observed between it and n-Si, and the ZnO layer, which was not deposited gold film. During the course of I-V characteristics measurement, the sample, grown on the n-Si and post treated at 750°C, appeared overflow twice, and then was observed stable rectifying characteristic. But the sample post treated at 650°C and lower temperature, was not observed rectifying characteristic. Farther experiment researches require to carried out. 關鍵詞： ZnO films, p-type Conversion, Gold Alloy (瀏覽全文) 發(fā)表日期： 2006年11月29日 同行評議：
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綜合評價： （暫時沒有） 修改稿：【合金法實現(xiàn)ZnO的P型轉(zhuǎn)化】相關文章：
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